Silicon carbide (SIC) is a typical representative of wide band gap semiconductor materials. It has excellent properties such as high bandgap width, high breakdown field strength and high thermal conductivity. It has become an ideal semiconductor material for high temperature, high frequency and high power power electronic devices.

The development of overseas SiC semiconductor industry chain starts early, and the process products from substrate to epitaxial wafer to chip are relatively mature. However, in recent years, the domestic SiC industry chain has made great progress.

It is understood that since this year, China Resources Microelectronics has entered the field of silicon carbide. In terms of product line and technology development, the entry of this domestic power IDM leader will push domestic silicon carbide into a new stage.

SiC market structure

The silicon carbide industry chain is divided into SiC substrate, EPI epitaxial wafer, device, module and other links. At present, the global silicon carbide market is basically monopolized by foreign countries. According to yole data, Cree, Infineon and Romo occupy about 90% of the SiC market share. Cree is the main supplier of SiC substrate, and Roma and Italian semiconductor have their own SiC production lines.

In terms of substrate, international mainstream products are transiting from 4-inch to 6-inch, and Cree has developed 8-inch substrate. The main suppliers of domestic substrates are tiankeheda, Shandong Tianyue and Tongguang crystal, which can supply 3-6 inch single crystal substrates. Domestic SiC substrate is mainly 4-inch, and 6-inch substrate needs to be broken.

In August 2019, Huawei invested in Shandong Tianyue company through its Hubble Technology Investment Co., Ltd., accounting for 10%, indicating that Huawei is laying out a new generation of semiconductor material technology.

In terms of epitaxial wafers, Xiamen hantiancheng, Dongguan Tianyu and Shiji Jinguang have been able to provide 4-inch / 6-inch SiC epitaxial wafers. At present, 6-inch SiC epitaxial wafers can be supplied locally.

In terms of SiC devices, 600 ~ 1700V SiC SBD and MOSFET have been industrialized in the world. The voltage withstand level of mainstream products is below 1200V, and the package form is mainly to package. In terms of price, the price of SiC products in the world is 5 ~ 6 times of that of corresponding Si products, which is decreasing at a rate of 10% per year. It is predicted that with the expansion of upstream materials and devices, the market supply will increase in the next two to three years, and the price will further drop. It is estimated that when the price reaches 2-3 times of the corresponding Si products, the advantages brought by the reduction of system cost and performance improvement will promote SiC to gradually occupy the market space of Si devices.

Domestic silicon carbide device suppliers mainly include CRRC times electric, CLP 55 Research Institute, CLP 13 Research Institute, basic semiconductor, Tyco Tianrun, Ruineng semiconductor, etc., as well as China Resources Microelectronics, the leading power IDM in China, has also entered this field.